This part is a kind of semiconductor called CS2N60A3H.

The linear model describes the behavior of a MOSFET biased with a small drain-to-source voltage. As the name suggests, the linear model, describes the MOSFET acting as a linear device. More specifically, it can be modeled as a linear resistor whose resistance is modulated by the gate-to-source voltage. Neha Sharan and Ashwani K. Rana - Analysis of Strained Silicon MOSFETs. Fundamentals of MOSFET devices zWhen the gate length of MOSFET is reduced to submicron dimensions, the electric field distribution in the channel region is transformed from one dimensional to 2-D zIn long gate devices, potential contours are parallel to oxide/silicon interface zFor short channel devices, drain voltage.

1. 2SK360IGETL, datasheet for 2SK360IGETL - Silicon N-Channel MOS FET provided by Renesas Technology Corp. 2SK360IGETL pdf documentation and 2SK360IGETL application notes, selection guide.
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Function of this product has Silicon N-Channel Power MOSFET.

Manufacturers : Huajing Microelectronics

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Some of the text within the PDF file :

Silicon N-Channel Power MOSFET CS2N60 A3H ○R General Description： VDSS 600 V CS2N60 A3H, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.. Features： l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:5.4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25�� [ ... ]

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Silicon Mosfet Transistor

CS2N60A3H PDF Datasheet Download

Part number : MIP2K20MS

Functions : Silicon MOS FET type integrated circuit, This is Semiconductor.

Manufacturer : Panasonic

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The texts in the PDF file :

MIP2K20MS Silicon MOS FET type integrated circuit 

Features

Silicon Carbide Mosfet Advantages

 Built-in jitter function  Built-in charge protection circuit Built-in overheating, loadshorting and overvoltage protection circuits  Package  Code DIP7-A1  Pin Name 1. VDD 2. FB 3. CL 4. VCC  Applications  Chargers (for DSC, etc.)  AC adapter 5. DRAIN 6.  7. SOURCE 8. SOURCE  Absolute Maximum Ratings Ta = 25°C±3°C Parameter DRAIN voltage VCC voltage VDD voltage Feedback voltage Feedback current CL pin voltage CL pin current Output peak current * Channel temperature Storage temperature Symbol VD VCC VDD VFB IFB VCL ICL IDP Tch Tstg Rating – 0.3 to +700 – 0.3 to +45 – 0.3 to +8 – 0.3 to +8 500 – 0.3 to +8 150 0.95 150 -55 to +150 Unit V V mA A °C °C  Marking Symbol: MIP2K2 Note) *: The guarantee within the following pulse width. Leading edge blanking delay + Current limit delay ton(BLK) + td(OCL)  Block Diagram VCC VCC UV VDD Constant current resource Regulator DRAIN VCC(ON) VCC OVP VCC(OV) Oscillator with Jitter ILIMIT variable circuit Overheat protection Restart trigger VDD S R Q Q VDD UV Gate driver Power MOSFET CL IN ICL_LOW VCL_OUT FB MAXDC fosc(L) CLOCK S R ILIMIT compensation Q Q Blanking pulse generation circuit in on-state Light load detection For intermittent Oscillation control VCL Clamp circuit (ILIMIT setting) Drain current for detection SOURCE Publication date: October 2010 Ver. AEF 1 MIP2K20MS  Electrical Characteristics TC = 25°C±2°C Parameter Control functions fosc Output frequency fosc(L) Jitter frequency deviation Jitter frequency modulation rate Maximum duty cycle VDD voltage UV lockout threshold voltage VCC start voltage VCC charge stop threshold voltage Feedback threshold voltage Feedback hysteresis current FB pin current at heavy load FB pin voltage Supply current Supply current at light load Supply current at heavy load ∆f fM MAXDC VDD VUV VCC(ON) VCC1 IFB1 IFBHYS IFB0 VFB ICC ICC(OFF) ICC0 Ich1 VDD [ … ]

Silicon Mosfet

MIP2K20MS PDF File